Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers.
Point defects, impurities, and defect–impurity complexes in diamond microcrystals were studied with the cathodoluminescence (CL) spectroscopy in the scanning electron microscope, photoluminescence (PL), and Raman spectroscopy (RS).
Extensive Raman spectroscopy studies combined with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) measurements were performed to investigate structural and chemical changes in diamond layers deposited by chemical vapour deposition (CVD) upon post-growth treatment with hydrogen.
The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy.
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique.
In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics.
Conventional metal wires suffer from a significant degradation or complete failure in their electrical performance, when subjected to harsh oxidizing environments, however wires constructed from Carbon Nanotubes (CNTs) have been found to actually improve in their electrical performance when subjected to these environments.
Carbon-modified titanium(IV) oxide with improved photocatalytic properties under visible light was used as an admixture for cement composites.