Heterozłącze diamentu n–Si/p–CVD

Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, 𝐼−𝑉−𝑇 characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded 𝐼−𝑉−𝑇 in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes 𝐼−𝑉−𝑇 characteristics in a wide range of voltage, even where the current saturation effect occurs.